Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

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5 - 10₩3,166.80₩15,834.00
15 - 20₩3,084.90₩15,424.50
25 +₩2,991.30₩14,956.50

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포장 옵션
RS 제품 번호:
210-4963
제조사 부품 번호:
SiHA186N60EF-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

33W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Height

4.3mm

Length

28.1mm

Width

9.7mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 8.4A Maximum Continuous Drain Current - SiHA186N60EF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for industrial power control and conversion. It functions as an enhancement-mode transistor for use in through-hole assemblies and is suited to applications requiring sustained operation across a wide temperature range.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications • 8.4 A continuous drain current supports moderate load currents • 168 mΩ Rds(on) reduces conduction losses under load • 21 nC typical gate charge minimises drive energy requirements • 33W power dissipation allows steady-state thermal handling • 150 °C maximum operating temperature endures harsh thermal conditions

Applications


• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive gate stages • Used for mains-frequency inverter output stages • Can be used for power factor correction circuitry • Used with discrete power assemblies requiring through-hole mounting

What gate voltage range is safe for switching control?


The device accepts up to 30V between gate and source, so driver stages should be limited within this range to avoid gate overstress.

How does the package choice affect mounting and heat management?


The TO-220 through-hole package facilitates bolt‑down heatsinking and straightforward PCB mounting for effective thermal coupling.

What extremes of ambient temperature can it withstand?


It operates from -55 °C up to 150 °C, allowing use in environments with wide thermal excursions.

What should be considered when designing for continuous current?


Account for 8.4 A continuous drain current and 33W dissipation by specifying adequate heatsinking and a thermal path to maintain safe junction temperatures.

How does gate charge influence driver selection?


A typical gate charge of 21 nC helps determine driver current and switching speed requirements to achieve desired rise and fall times.

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