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Toshiba TK099V65Z N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

Name: Toshiba TK099V65Z N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN
Brand: Toshiba
SKU: 206-9729
Availability: InStock

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₩24,315,000.00

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모두 선택	제품 정보	값
	브랜드	Toshiba
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	TK099V65Z
	Package Type	DFN
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	-1.7V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	8mm
	Standards/Approvals	No
	Length	8mm
	Height	500μm
	Automotive Standard	No

	모두 선택
	브랜드 Toshiba
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series TK099V65Z
	Package Type DFN
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf -1.7V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 8mm
	Standards/Approvals No
	Length 8mm
	Height 500μm
	Automotive Standard No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.08 ?

Storage temperature -55 to 150°C

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