DiodesZetex DMN6022 Type N-Channel MOSFET, 6.9 A, 60 V Enhancement, 8-Pin SO-8 DMN6022SSS-13
- RS 제품 번호:
- 206-0091
- 제조사 부품 번호:
- DMN6022SSS-13
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩23,782.00
마지막 RS 재고
- 최종적인 1,675 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 600 | ₩951.28 | ₩23,763.20 |
| 625 - 1225 | ₩926.84 | ₩23,161.60 |
| 1250 + | ₩911.80 | ₩22,804.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 206-0091
- 제조사 부품 번호:
- DMN6022SSS-13
- 제조업체:
- DiodesZetex
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN6022 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.8 mm | |
| Standards/Approvals | No | |
| Length | 4.85mm | |
| Height | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN6022 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Width 3.8 mm | ||
Standards/Approvals No | ||
Length 4.85mm | ||
Height 1.4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 1.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
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