제조사부품번호

DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563 DMG1023UVQ-7

RS 제품 번호:: 206-0066
제조사 부품 번호:: DMG1023UVQ-7
제조업체:: DiodesZetex

DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563 DMG1023UVQ-7

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩428,640.00

현재 액세스할 수 없는 재고 정보

수량	한팩당	릴당*
3000 - 3000	₩142.88	₩430,332.00
6000 - 9000	₩141.00	₩421,872.00
12000 +	₩137.24	₩409,464.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 206-0066
제조사 부품 번호:: DMG1023UVQ-7
제조업체:: DiodesZetex

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	DiodesZetex
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.03A
	Maximum Drain Source Voltage Vds	20V
	Series	DMG1023
	Package Type	SOT-563
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	-0.8V
	Maximum Power Dissipation Pd	530W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	6 V
	Typical Gate Charge Qg @ Vgs	622.4nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Length	1.6mm
	Height	0.6mm
	Width	1.2 mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 DiodesZetex
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.03A
	Maximum Drain Source Voltage Vds 20V
	Series DMG1023
	Package Type SOT-563
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Forward Voltage Vf -0.8V
	Maximum Power Dissipation Pd 530W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 6 V
	Typical Gate Charge Qg @ Vgs 622.4nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Length 1.6mm
	Height 0.6mm
	Width 1.2 mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet - DMG1023UVQ-7

COO (Country of Origin):: CN

The DiodesZetex 20V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6 V with 0.53W thermal power dissipation.

Low input capacitance

Fast switching speed

DiodesZetex Dual DMG1023 1 Type P-Channel MOSFET, 1.03 A, 20 V Enhancement, 6-Pin SOT-563 DMG1023UVQ-7

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