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STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 204-3947
제조사 부품 번호:: STW50N65DM6
제조업체:: STMicroelectronics

STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩293,110.80

일시적 품절

2026년 6월 10일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩9,770.36	₩293,127.72
60 - 90	₩9,557.92	₩286,754.52
120 +	₩9,347.36	₩280,403.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 204-3947
제조사 부품 번호:: STW50N65DM6
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	DM6
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	91mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52.5nC
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	20.15mm
	Width	5.15 mm
	Length	15.75mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series DM6
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 91mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52.5nC
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 20.15mm
	Width 5.15 mm
	Length 15.75mm
	Automotive Standard No

Datasheet - STW50N65DM6

COO (Country of Origin):: CN

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247

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