STMicroelectronics SCT Type N-Channel MOSFET, 100 A, 1200 V Depletion, 7-Pin H2PAK SCTW100N65G2AG
- RS 제품 번호:
- 202-5486
- 제조사 부품 번호:
- SCTW100N65G2AG
- 제조업체:
- STMicroelectronics
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Subtotal (1 unit)*
₩52,132.40
일시적 품절
- 2026년 10월 29일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩52,132.40 |
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| 15 + | ₩49,293.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5486
- 제조사 부품 번호:
- SCTW100N65G2AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 420W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Height | 34.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 420W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Height 34.95mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
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