onsemi N-Channel MOSFET, 316 A, 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04CL
- RS 제품 번호:
- 195-2672
- 제조사 부품 번호:
- NVMFSC0D9N04CL
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩15,918,000.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩5,306.00 | ₩15,915,600.00 |
| 6000 - 9000 | ₩5,200.00 | ₩15,597,600.00 |
| 12000 + | ₩5,096.00 | ₩15,285,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2672
- 제조사 부품 번호:
- NVMFSC0D9N04CL
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 316A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 950μm | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 316A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 175°C | ||
Height 950μm | ||
Width 5mm | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
관련된 링크들
- onsemi N-Channel MOSFET, 316 A, 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04CL
- onsemi N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04C
- onsemi N-Channel MOSFET, 224 A, 60 V Enhancement, 8-Pin PQFN NVMFSC1D6N06CL
- onsemi N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN
- onsemi N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NTMFSC0D9N04CL
- onsemi NTMTS0D6N04CL N-Channel MOSFET, 554.5 A, 40 V Enhancement, 8-Pin DFN NTMTS0D6N04CLTXG
- onsemi NVMTS0D4N04CL N-Channel MOSFET, 553.8 A, 40 V Enhancement, 8-Pin DFN NVMTS0D4N04CLTXG
- onsemi N-Channel MOSFET, 224 A, 60 V Enhancement, 8-Pin PQFN
