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STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

RS 제품 번호:: 192-4925
제조사 부품 번호:: STP26N60DM6
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

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Subtotal (1 pack of 2 units)*

₩13,648.80

재고있음

66 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 12	₩6,824.40	₩13,648.80
14 - 24	₩6,655.20	₩13,310.40
26 +	₩6,551.80	₩13,103.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 192-4925
제조사 부품 번호:: STP26N60DM6
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	195mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	110W
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.4mm
	Height	15.75mm
	Width	4.6 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 195mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 110W
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.4mm
	Height 15.75mm
	Width 4.6 mm
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

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