ROHM SiC N-Channel MOSFET, 70 A, 650 V, 4-Pin TO-247-4 SCT3030ARC14

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RS 제품 번호:
191-8501
제조사 부품 번호:
SCT3030ARC14
제조업체:
ROHM
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브랜드

ROHM

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Typical Gate Charge @ Vgs

104 nC @ 18V

SCT3030AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.

Low on-resistance

Fast switching speed

Fast reverse recovery

Easy to parallel

Simple to drive

Pb-free lead plating

High efficiency 4pin package

Evaluation board 'P02SCT3040KR-EVK-001'

Application

Solar inverters

DC/DC converters

Switch mode power supplies

Induction heating

Motor drives

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