STMicroelectronics Single STripFET 1 N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerFLAT STL40DN3LLH5
- RS 제품 번호:
- 188-8491
- 제조사 부품 번호:
- STL40DN3LLH5
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
750개 더 담고 2% 할인 받기
View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩18,160.00
일시적 품절
- 2027년 5월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* | 절감 |
|---|---|---|---|
| 10 - 740 | ₩1,816.00 | ₩18,160.00 | - |
| 750 - 1490 | ₩1,770.00 | ₩17,700.00 | 2% |
| 1500 + | ₩1,742.00 | ₩17,420.00 | 4% |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8491
- 제조사 부품 번호:
- STL40DN3LLH5
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerFLAT | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | 1.1V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerFLAT | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf 1.1V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 6.2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
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