STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 188-8289
- 제조사 부품 번호:
- STD5N80K5
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩3,694,200.00
재고있음
- 추가로 2025년 12월 29일 부터 2,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,477.68 | ₩3,692,790.00 |
| 5000 - 22500 | ₩1,447.60 | ₩3,619,000.00 |
| 25000 + | ₩1,419.40 | ₩3,546,620.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8289
- 제조사 부품 번호:
- STD5N80K5
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.73Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Height | 2.17mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.73Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Height 2.17mm | ||
Automotive Standard No | ||
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industrys lowest RDS(on) x area
Industrys best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
관련된 링크들
- STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 STD5N80K5
- STMicroelectronics Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-252 STD80N340K6
- STMicroelectronics SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- STMicroelectronics STD Type N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252 STD80N240K6
