STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 188-8286
- 제조사 부품 번호:
- STD11N65M2
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩3,844,600.00
일시적 품절
- 2026년 4월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,537.84 | ₩3,844,130.00 |
| 5000 - 22500 | ₩1,507.76 | ₩3,767,050.00 |
| 25000 + | ₩1,477.68 | ₩3,691,850.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-8286
- 제조사 부품 번호:
- STD11N65M2
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 680mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 85W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Height | 2.17mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 680mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 85W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Height 2.17mm | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS) profile
Zener-protected
Applications
Switching applications
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