Vishay SiSHA14DN Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- RS 제품 번호:
- 188-4899
- 제조사 부품 번호:
- SiSHA14DN-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,161,840.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩387.28 | ₩1,161,276.00 |
| 6000 - 9000 | ₩379.76 | ₩1,137,588.00 |
| 12000 + | ₩372.24 | ₩1,115,028.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 188-4899
- 제조사 부품 번호:
- SiSHA14DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSHA14DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26.5W | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSHA14DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26.5W | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
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