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onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23 FDC3601N

RS 제품 번호:: 186-8997
제조사 부품 번호:: FDC3601N
제조업체:: onsemi

onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23 FDC3601N

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Subtotal (1 pack of 25 units)*

₩21,338.00

재고있음

2,375 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
25 - 725	₩853.52	₩21,338.00
750 - 1475	₩832.84	₩20,811.60
1500 +	₩819.68	₩20,492.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 186-8997
제조사 부품 번호:: FDC3601N
제조업체:: onsemi

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TSOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	550mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	3.7nC
	Maximum Power Dissipation Pd	0.96W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	1mm
	Width	3 mm
	Standards/Approvals	No
	Length	3.1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 100V
	Package Type TSOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 550mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 3.7nC
	Maximum Power Dissipation Pd 0.96W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 1mm
	Width 3 mm
	Standards/Approvals No
	Length 3.1mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet FDC3601N

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1.0 A, 100 V

RDS(on) = 500 mΩ@ VGS = 10 V

RDS(on) = 550 mΩ @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.

onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23 FDC3601N

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