onsemi Single FDP083N15A 1 Type N-Channel MOSFET, 117 A, 150 V, 3-Pin TO-220 FDP083N15A-F102
- RS 제품 번호:
- 186-7931
- 제조사 부품 번호:
- FDP083N15A-F102
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩43,407.00
재고있음
- 추가로 2026년 6월 08일 부터 280 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩8,681.40 | ₩43,407.00 |
| 15 - 20 | ₩8,466.90 | ₩42,334.50 |
| 25 + | ₩8,334.30 | ₩41,671.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 186-7931
- 제조사 부품 번호:
- FDP083N15A-F102
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 117A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | FDP083N15A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Maximum Power Dissipation Pd | 294W | |
| Forward Voltage Vf | 1.25V | |
| Typical Gate Charge Qg @ Vgs | 64.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.36mm | |
| Height | 8.78mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 117A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series FDP083N15A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Maximum Power Dissipation Pd 294W | ||
Forward Voltage Vf 1.25V | ||
Typical Gate Charge Qg @ Vgs 64.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS Compliant | ||
Length 10.36mm | ||
Height 8.78mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
RDS(on) = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A
Fast Switching Speed
Low Gate Charge, QG = 64.5nC ( Typ.)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
Applications
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
Uninterruptible Power Supply
Other Data Processing
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
관련된 링크들
- onsemi Single FDP083N15A 1 Type N-Channel MOSFET, 117 A, 150 V, 3-Pin TO-220
- onsemi FDP075N15A-F102 Digital Transistor N-Channel Through Hole TO-220, 3-Pin
- onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C
- onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C
- onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220
- onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench Type N-Channel MOSFET, 5 A, 150 V Enhancement, 3-Pin TO-220 FDP42AN15A0
- onsemi Digital Transistor N-Channel Through Hole TO-220, 3-Pin
