onsemi FDWS Type N-Channel MOSFET, 80 A, 100 V Enhancement, 8-Pin DFN FDWS86068-F085
- RS 재고 번호:
- 185-9082
- 제조 부품 번호:
- FDWS86068-F085
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 4 units)*
₩23,146.56
마지막 RS 재고
- 최종적인 2,984 개 unit(s)이 배송 준비 됨
단위당 | 한팩당 | 한팩당* |
|---|---|---|
| 4 - 748 | ₩5,786.64 | ₩23,142.80 |
| 752 - 1496 | ₩5,640.00 | ₩22,560.00 |
| 1500 + | ₩5,555.40 | ₩22,221.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 재고 번호:
- 185-9082
- 제조 부품 번호:
- FDWS86068-F085
- 제조업체:
- onsemi
사양
기술적 참조
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDWS | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 6.3 mm | |
| Length | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDWS | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 6.3 mm | ||
Length 5.1mm | ||
Automotive Standard AEC-Q101 | ||
비호환
- COO (Country of Origin):
- PH
N-Channel PowerTrench® MOSFET 100V, 80A, 4.5mΩ
Typical RDS(on) = 5.2 mΩ at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 31 nC at VGS = 10 V, ID = 80 A
UIS Capability
These Devices are Pb−Free
Wettable Flanks for Automatic Optical Inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
관련된 링크들
- onsemi FDWS Type N-Channel MOSFET, 80 A, 100 V Enhancement, 8-Pin DFN
- onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252 FDD86250-F085
- onsemi FDBL Type N-Channel MOSFET, 240 A, 100 V Enhancement, 8-Pin H-PSOF FDBL86066-F085
- onsemi PowerTrench Type N-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220 FDPF085N10A
- onsemi NTMFS Type N-Channel MOSFET, 136 A, 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET, 337 A, 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET, 316 A, 40 V Enhancement, 8-Pin DFN
