DiodesZetex DMT Type N-Channel MOSFET, 82 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH43M8LPS-13
- RS 제품 번호:
- 182-7454
- 제조사 부품 번호:
- DMTH43M8LPS-13
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩13,235.20
일시적 품절
- 2027년 1월 18일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 620 | ₩1,323.52 | ₩13,235.20 |
| 630 - 1240 | ₩1,289.68 | ₩12,896.80 |
| 1250 + | ₩1,270.88 | ₩12,708.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-7454
- 제조사 부품 번호:
- DMTH43M8LPS-13
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI5060 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI5060 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
BLDC Motors
DC-DC Converters
Load Switch
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