DiodesZetex Dual 2 Type N-Channel Power MOSFET, 33.2 A, 60 V Enhancement, 8-Pin PowerDI5060
- RS 제품 번호:
- 182-6944
- 제조사 부품 번호:
- DMTH6016LPD-13
- 제조업체:
- DiodesZetex
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,931,700.00
일시적 품절
- 2026년 4월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩772.68 | ₩1,929,820.00 |
| 5000 - 7500 | ₩755.76 | ₩1,891,280.00 |
| 10000 + | ₩740.72 | ₩1,853,210.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-6944
- 제조사 부품 번호:
- DMTH6016LPD-13
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 33.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | 175°C | |
| Maximum Power Dissipation Pd | 37.5W | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.05mm | |
| Width | 4.95 mm | |
| Length | 5.85mm | |
| Standards/Approvals | AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 33.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature 175°C | ||
Maximum Power Dissipation Pd 37.5W | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 1.05mm | ||
Width 4.95 mm | ||
Length 5.85mm | ||
Standards/Approvals AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it deal for high-efficiency power management applications.
Rated to +175° C – Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Engine Management Systems
Body Control Electronics
DCDC Converters
관련된 링크들
- DiodesZetex Dual 2 Type N-Channel Power MOSFET, 33.2 A, 60 V Enhancement, 8-Pin PowerDI5060 DMTH6016LPD-13
- DiodesZetex Dual DMTH4008LPDWQ 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Dual DMTH4008LPDW 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Dual DMTH4008LPDWQ 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH4008LPDWQ-13
- DiodesZetex Dual DMTH4008LPDW 1 Type N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH4008LPDW-13
- DiodesZetex Dual DMNH6035 1 Type N-Channel MOSFET, 33 A, 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex DMTH41 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Dual DMNH6035 1 Type N-Channel MOSFET, 33 A, 60 V Enhancement, 8-Pin PowerDI5060 DMNH6035SPDW-13