제조사부품번호

DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN

RS 제품 번호:: 182-6931
제조사 부품 번호:: DMT6018LDR-13
제조업체:: DiodesZetex

DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN

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대량 구매 할인 기용 가능

Subtotal (1 reel of 10000 units)*

₩9,099,200.00

마지막 RS 재고

최종적인 20,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
10000 - 10000	₩909.92	₩9,095,440.00
20000 - 90000	₩881.72	₩8,822,840.00
100000 +	₩855.40	₩8,557,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 182-6931
제조사 부품 번호:: DMT6018LDR-13
제조업체:: DiodesZetex

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.1A
	Maximum Drain Source Voltage Vds	60V
	Package Type	VDFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.9W
	Typical Gate Charge Qg @ Vgs	6.2nC
	Forward Voltage Vf	0.75V
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Length	3.05mm
	Standards/Approvals	J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS
	Height	0.8mm
	Width	3.05 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.1A
	Maximum Drain Source Voltage Vds 60V
	Package Type VDFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.9W
	Typical Gate Charge Qg @ Vgs 6.2nC
	Forward Voltage Vf 0.75V
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Length 3.05mm
	Standards/Approvals J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS
	Height 0.8mm
	Width 3.05 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet DMT6018LDR-13

COO (Country of Origin):: CN

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Applications

Power Management Functions

Analog Switch

DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN

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