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onsemi FDPF N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

RS 제품 번호:: 181-1911
제조사 부품 번호:: FDPF2D3N10C
제조업체:: onsemi

onsemi FDPF N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

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Subtotal (1 pack of 2 units)*

₩23,080.00

마지막 RS 재고

최종적인 100 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
2 - 248	₩11,540.00	₩23,080.00
250 - 498	₩11,250.00	₩22,500.00
500 +	₩11,080.00	₩22,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 181-1911
제조사 부품 번호:: FDPF2D3N10C
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	222A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	FDPF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	45W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	16.07mm
	Width	4.9mm
	Standards/Approvals	No
	Length	10.36mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 222A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series FDPF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 45W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 16.07mm
	Width 4.9mm
	Standards/Approvals No
	Length 10.36mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

Power Density & Shielded Gate

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 108nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

onsemi FDPF N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

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