Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-263 IRF9Z24SPBF
- RS 제품 번호:
- 180-8832
- 제조사 부품 번호:
- IRF9Z24SPBF
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
₩24,440.00
마지막 RS 재고
- 최종적인 50 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩4,888.00 | ₩24,440.00 |
| 15 - 20 | ₩4,768.00 | ₩23,840.00 |
| 25 + | ₩4,692.00 | ₩23,460.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8832
- 제조사 부품 번호:
- IRF9Z24SPBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Width | 10.67mm | |
| Length | 2.79mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Width 10.67mm | ||
Length 2.79mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF9Z24S is a P-channel power MOSFET having drain to source(Vds) voltage of -60V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current -11A.
Advanced process technology
Surface mount
175 °C operating temperature
관련된 링크들
- Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-263 IRF9Z24SPBF
- Vishay Single 1 Type P-Channel Power MOSFET, 6.8 A, 100 V TO-263 IRF9520SPBF
- Vishay Single IRF620S 1 Type N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF
- Vishay Single 1 Type N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF
- Vishay IRF9540S Type P-Channel MOSFET, 19 A, 100 V Enhancement, 3-Pin TO-263 IRF9540SPBF
- Vishay IRF Type N-Channel MOSFET, 14 A, 250 V Enhancement, 3-Pin TO-263 IRF644SPBF
- Vishay IRF9530S Type P-Channel Power MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-263 IRF9530SPBF
- Vishay IRF9630S Type P-Channel MOSFET, 6.5 A, 200 V Enhancement, 3-Pin TO-263 IRF9630SPBF