Vishay Single 1 Type N-Channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223
- RS 제품 번호:
- 180-8362
- 제조사 부품 번호:
- IRLL014TRPBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,551,000.00
일시적 품절
- 2026년 9월 21일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 10000 | ₩620.40 | ₩1,550,060.00 |
| 12500 + | ₩558.36 | ₩1,394,960.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8362
- 제조사 부품 번호:
- IRLL014TRPBF
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.2Ω | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Length | 6.3mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.2Ω | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Length 6.3mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, SOT-223-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 200mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 3.1W. It has a minimum and maximum driving voltage of 4V and 5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Halogen and lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 150°C
• RDS (on) specified at VGS is 4V and 5V
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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