Vishay Single 1 Type N-Channel Power MOSFET, 50 A, 60 V TO-220AB IRFZ44RPBF
- RS 제품 번호:
- 180-8357
- 제조사 부품 번호:
- IRFZ44RPBF
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩122,576.00
재고있음
- 추가로 2025년 12월 29일 부터 1,250 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,451.52 | ₩122,613.60 |
| 100 - 150 | ₩2,398.88 | ₩119,944.00 |
| 200 + | ₩2,346.24 | ₩117,293.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-8357
- 제조사 부품 번호:
- IRFZ44RPBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 28mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 150W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Advanced process technology
• Drop in replacement of the IRFZ44, SiHFZ44 for linear/audio applications
• Dynamic dV/dt rating
• Fast switching
• Fully avalanche rated
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Ultra low on-resistance
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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