Vishay Single 1 N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF

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RS 제품 번호:
180-8299
제조사 부품 번호:
IRF530SPBF
제조업체:
Vishay
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브랜드

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.16Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

88W

Forward Voltage Vf

2.5V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Width

10.67mm

Length

9.65mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Height

4.83mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 160mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Available in tape and reel

• Dynamic dV/dt rating

• Ease of paralleling

• Fast switching

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• Repetitive avalanche rated

• TrenchFET power MOSFET

Applications


• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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