Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

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Subtotal (1 pack of 10 units)*

₩12,464.40

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10 - 620₩1,246.44₩12,464.40
630 - 1240₩1,216.36₩12,163.60
1250 +₩1,195.68₩11,956.80

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포장 옵션
RS 제품 번호:
180-7965
제조사 부품 번호:
SI4154DY-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• POL

• Synchronous rectifier

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

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