Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

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포장 옵션
RS 제품 번호:
180-7915
제조사 부품 번호:
SI1411DH-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.52A

Maximum Drain Source Voltage Vds

150V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.6Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.1V

Typical Gate Charge Qg @ Vgs

4.2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Length

2.2mm

Standards/Approvals

No

Height

1.1mm

Width

2.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

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