Vishay Single TrenchFET Type P-Channel MOSFET, 18 A, 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3

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RS 제품 번호:
180-7356
제조사 부품 번호:
SIS407ADN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39.1W

Maximum Gate Source Voltage Vgs

8V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

RoHS

Length

3.61mm

Height

0.79mm

Width

3.61mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 20V and maximum gate-source voltage of 8V. It has a drain-source resistance of 9mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 39.1W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free component

• Low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Adaptor switches

• Battery management

• Load switches

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