ROHM HP8S36 Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB
- RS 제품 번호:
- 178-5992
- 제조사 부품 번호:
- HP8S36TB
- 제조업체:
- ROHM
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩23,424.80
마지막 RS 재고
- 최종적인 330 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩2,342.48 | ₩23,424.80 |
| 50 - 90 | ₩2,284.20 | ₩22,842.00 |
| 100 - 240 | ₩2,225.92 | ₩22,259.20 |
| 250 - 990 | ₩2,171.40 | ₩21,714.00 |
| 1000 + | ₩2,116.88 | ₩21,168.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-5992
- 제조사 부품 번호:
- HP8S36TB
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 27 A, 80 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HP8S36 | |
| Package Type | HSOP8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 22 W, 29 W | |
| Maximum Gate Source Voltage | ±128 V, ±20 V | |
| Length | 5mm | |
| Width | 5.8mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A, 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HP8S36 | ||
Package Type HSOP8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 22 W, 29 W | ||
Maximum Gate Source Voltage ±128 V, ±20 V | ||
Length 5mm | ||
Width 5.8mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
제외
- COO (Country of Origin):
- TH
HP8S36 is low on-resistance MOSFET for switching application.
Low on - resistance
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
관련된 링크들
- ROHM Dual HP 2 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin HSOP HP8K24TB
- ROHM HP8KC5 Dual N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSOP-8 HP8KC5TB1
- ROHM HP8KE5 Dual N-Channel MOSFET, 8.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE5TB1
- ROHM HP8KB5 Dual N-Channel MOSFET, 16.5 A, 40 V Enhancement, 8-Pin HSOP-8 HP8KB5TB1
- ROHM HP N-Channel MOSFET, 80 A, 30 V, 8-Pin HSOP8 HP8K24TB
- ROHM Dual (Nch+Pch) HP8 2 Type P, Type N-Channel MOSFET, 40 V Enhancement, 8-Pin HSOP-8 HP8MB5TB1
- ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1
- ROHM HP8 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSOP-8 HP8KC6TB1
