제조사부품번호

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 178-4258
제조사 부품 번호:: NTPF082N65S3F
제조업체:: onsemi

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩313,208.00

마지막 RS 재고

최종적인 300 개 unit(s)이 배송 준비 됨

수량	한팩당	Per Tube*
50 - 50	₩6,264.16	₩313,245.60
100 - 150	₩6,078.04	₩303,864.40
200 +	₩5,955.84	₩297,792.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4258
제조사 부품 번호:: NTPF082N65S3F
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	48W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	16.12mm
	Width	4.9 mm
	Length	10.63mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 48W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 16.12mm
	Width 4.9 mm
	Length 10.63mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ T_J = 150 oC

Ultra Low Gate Charge (Typ. Qg = 70 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 70 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge Circuit

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

Solar / UPS

EV charger

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

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