Vishay Siliconix TrenchFET Type N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 178-3877P
- 제조사 부품 번호:
- SQ2364EES-T1_GE3
- 제조업체:
- Vishay Siliconix
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대량 구매 할인 기용 가능
Subtotal 750 units (supplied on a reel)*
₩595,020.00
재고있음
- 추가로 2025년 12월 29일 부터 3,225 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 750 - 1475 | ₩793.36 |
| 1500 + | ₩782.08 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-3877P
- 제조사 부품 번호:
- SQ2364EES-T1_GE3
- 제조업체:
- Vishay Siliconix
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
제외
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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