Vishay TrenchFET N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23 SQ2364EES-T1_GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
178-3708
제조사 부품 번호:
SQ2364EES-T1_GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

8V

Maximum Operating Temperature

175°C

Length

3.04mm

Width

1.4mm

Standards/Approvals

No

Height

1.02mm

Automotive Standard

AEC-Q101

제외

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

관련된 링크들