Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- RS 제품 번호:
- 178-3670
- 제조사 부품 번호:
- SiDR392DP-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 178-3670
- 제조사 부품 번호:
- SiDR392DP-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | +20V, +6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.99mm | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs +20V, +6V | ||
Maximum Operating Temperature 150°C | ||
Length 5.99mm | ||
Width 5mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Automotive Standard No | ||
제외
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
관련된 링크들
- Vishay Siliconix TrenchFET N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- Vishay SiDR392DP N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
- Vishay TrenchFET Gen IV N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- Vishay SiDR220DP N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3