Vishay IRFP9240 Type P-Channel Power MOSFET, -12 A, -200 V Enhancement, 3-Pin TO-247AC IRFP9240PBF

RS 제품 번호:: 178-0786
제조사 부품 번호:: IRFP9240PBF
제조업체:: Vishay

Vishay IRFP9240 Type P-Channel Power MOSFET, -12 A, -200 V Enhancement, 3-Pin TO-247AC IRFP9240PBF

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Subtotal (1 tube of 25 units)*

₩101,900.00

625 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
25 - 100	₩4,076.00	₩101,880.00
125 +	₩3,668.00	₩91,700.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-0786
제조사 부품 번호:: IRFP9240PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-12A
	Maximum Drain Source Voltage Vds	-200V
	Package Type	TO-247AC
	Series	IRFP9240
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	44nC
	Maximum Power Dissipation Pd	150W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-5V
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Length	15.87mm
	Standards/Approvals	RoHS
	Height	20.7mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -12A
	Maximum Drain Source Voltage Vds -200V
	Package Type TO-247AC
	Series IRFP9240
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 44nC
	Maximum Power Dissipation Pd 150W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -5V
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Length 15.87mm
	Standards/Approvals RoHS
	Height 20.7mm
	Automotive Standard No

Vishay IRFP9240 Series Power MOSFET, 150W Maximum Power Dissipation, -200V Maximum Drain Source Voltage - IRFP9240PBF

This power MOSFET is a high-voltage P‑channel switching transistor designed for power-management and high-voltage applications. It operates across a wide ambient range and is supplied in a through‑hole package suitable for robust board mounting. The device is intended for circuits requiring substantial power handling and P‑channel topology for high-side switching or polarity-specific arrangements.

Features and Benefits:

• -200V drain‑source rating enables high-voltage switching capability
• P‑channel enhancement mode simplifies high-side switching arrangements
• -12A continuous drain current supports moderate high-current loads
• 150W power dissipation allows sustained power handling
• 500mΩ maximum Rds(on) reduces conduction losses under load
• 44nC typical gate charge yields predictable gate-drive requirements

Applications

• Suitable for high-voltage power rails and polarity protection
• Ideal for high-side switches in DC distribution systems
• Used with gate drivers requiring moderate charge handling
• Can be used for industrial power modules and supplies
• Appropriate for discrete power stages in converters

What mounting style does it require for thermal management?

It is supplied in a TO‑247AC through‑hole package intended for heatsinking on a chassis or dedicated sinks to dissipate heat effectively.

What gate-drive voltage constraints must I observe?

The maximum gate‑source voltage is 20V, so gate drivers should be limited within that range to avoid gate overstress.

How does temperature affect operating limits?

It is specified to function from -55°C up to 150°C, so derating and thermal design should account for elevated junction temperatures.

How many electrical connections are presented for circuit integration?

The device has three pins for drain, gate and source connection, consistent with standard discrete MOSFET implementations.