제조사부품번호

Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

RS 제품 번호:: 177-9706
제조사 부품 번호:: VN10KN3-G
제조업체:: Microchip

Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 Bag of 1000 units)*

₩673,040.00

일시적 품절

2026년 2월 03일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Bag*
1000 - 4000	₩673.04	₩672,852.00
5000 +	₩605.36	₩605,548.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 177-9706
제조사 부품 번호:: VN10KN3-G
제조업체:: Microchip

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	310mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	VN10K
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	1W
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	150°C
	Width	4.06 mm
	Standards/Approvals	No
	Length	5.08mm
	Height	5.33mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 310mA
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series VN10K
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 1W
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 150°C
	Width 4.06 mm
	Standards/Approvals No
	Length 5.08mm
	Height 5.33mm
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has continuous drain current of 310mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this transistor are 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) transistor that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC

Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

Microchip Technology MOSFET

Features and Benefits

Applications

Certifications

관련된 링크들