onsemi NTMFS6H800N Type N-Channel MOSFET, 203 A, 80 V Enhancement, 5-Pin DFN
- RS 제품 번호:
- 172-8781
- 제조사 부품 번호:
- NTMFS6H800NT1G
- 제조업체:
- onsemi
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- RS 제품 번호:
- 172-8781
- 제조사 부품 번호:
- NTMFS6H800NT1G
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS6H800N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS6H800N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
ON Semiconductor MOSFET
The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)
Applications
• 48V systems
• DC/DC converter
• Load switch
• Motor control
• Power switches (high side driver, low side driver, H-bridges etc.)
• Switching power supplies
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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