제조사부품번호

onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G

RS 제품 번호:: 172-3345
제조사 부품 번호:: NVMFD5C650NLWFT1G
제조업체:: onsemi

onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩54,614.00

마지막 RS 재고

최종적인 1,500 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 370	₩5,461.40	₩54,614.00
380 - 740	₩5,326.04	₩53,260.40
750 +	₩5,243.32	₩52,433.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 172-3345
제조사 부품 번호:: NVMFD5C650NLWFT1G
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	111A
	Maximum Drain Source Voltage Vds	60V
	Package Type	DFN
	Series	NVMFD5C650NL
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	0.9V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.1mm
	Width	5.1 mm
	Height	1.05mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 111A
	Maximum Drain Source Voltage Vds 60V
	Package Type DFN
	Series NVMFD5C650NL
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 0.9V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.1mm
	Width 5.1 mm
	Height 1.05mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G

관련된 링크들