ROHM R6024ENJ Type N-Channel MOSFET, 24 A, 600 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 172-0366
- 제조사 부품 번호:
- R6024ENJTL
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩3,372,720.00
일시적 품절
- 2026년 6월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩3,372.72 | ₩3,372,532.00 |
| 2000 - 2000 | ₩3,305.04 | ₩3,305,040.00 |
| 3000 + | ₩3,239.24 | ₩3,238,864.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 172-0366
- 제조사 부품 번호:
- R6024ENJTL
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | R6024ENJ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.7mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 9.2 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series R6024ENJ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.7mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 9.2 mm | ||
Automotive Standard No | ||
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
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