ROHM RSH070N05 N-Channel MOSFET, 7 A, 45 V, 8-Pin SOP RSH070N05GZETB
- RS 제품 번호:
- 171-9923
- 제조사 부품 번호:
- RSH070N05GZETB
- 제조업체:
- ROHM
대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩37,683.75
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 225 | ₩1,507.35 | ₩37,674.00 |
| 250 - 475 | ₩1,470.30 | ₩36,738.00 |
| 500 - 975 | ₩1,433.25 | ₩35,821.50 |
| 1000 - 1975 | ₩1,396.20 | ₩34,924.50 |
| 2000 + | ₩1,361.10 | ₩34,047.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 171-9923
- 제조사 부품 번호:
- RSH070N05GZETB
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 45 V | |
| Package Type | SOP | |
| Series | RSH070N05 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.05mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 45 V | ||
Package Type SOP | ||
Series RSH070N05 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5.2mm | ||
Maximum Operating Temperature +150 °C | ||
Width 4.05mm | ||
Typical Gate Charge @ Vgs 12 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4V-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
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