Vishay SQ Rugged N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3

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Subtotal (1 reel of 3000 units)*

₩2,106,000.00

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3000 - 12000₩702.00₩2,105,400.00
15000 +₩688.00₩2,063,400.00

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RS 제품 번호:
170-8306
제조사 부품 번호:
SQS462EN-T1_GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Series

SQ Rugged

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

135mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33W

Forward Voltage Vf

820mV

Typical Gate Charge Qg @ Vgs

8nC

Maximum Operating Temperature

175°C

Length

3.4mm

Standards/Approvals

No

Width

3.4mm

Height

1.12mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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