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Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

RS 제품 번호:: 170-2264
제조사 부품 번호:: SI4435DYTRPBF
제조업체:: Infineon

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

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RS 제품 번호:: 170-2264
제조사 부품 번호:: SI4435DYTRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	Si4435DYPbF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	40nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Height	1.5mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series Si4435DYPbF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 40nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Height 1.5mm
	Automotive Standard No

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free

Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

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