IXYS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 168-4819
- 제조사 부품 번호:
- IXFA22N65X2
- 제조업체:
- IXYS
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩299,484.00
재고있음
- 250 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩5,989.68 | ₩299,512.20 |
| 100 - 150 | ₩5,859.96 | ₩292,998.00 |
| 200 + | ₩5,730.24 | ₩286,493.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-4819
- 제조사 부품 번호:
- IXFA22N65X2
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 4.83mm | |
| Width | 11.05 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 4.83mm | ||
Width 11.05 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263 IXFA22N65X2
- IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263
- IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263 IXFA80N25X3
- IXYS Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227