IXYS X2-Class Type N-Channel Power MOSFET, 102 A, 650 V Enhancement, 3-Pin TO-264P

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Subtotal (1 tube of 25 units)*

₩615,183.00

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  • 2026년 12월 01일 부터 배송
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한팩당
Per Tube*
25 - 100₩24,607.32₩615,192.40
125 +₩24,114.76₩602,878.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
168-4812
제조사 부품 번호:
IXTK102N65X2
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

IXYS

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

102A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-264P

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1040W

Typical Gate Charge Qg @ Vgs

152nC

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

5.3mm

Length

20.3mm

Width

26.3 mm

Standards/Approvals

International Standard Packages

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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