onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 166-2858
- 제조사 부품 번호:
- 2N7002K
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩214,320.00
일시적 품절
- 2025년 12월 29일 부터 21,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩71.44 | ₩214,884.00 |
| 6000 - 9000 | ₩69.56 | ₩208,680.00 |
| 12000 + | ₩67.68 | ₩202,476.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2858
- 제조사 부품 번호:
- 2N7002K
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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