PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	44nC
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Height	1.5mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs 44nC
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Height 1.5mm
	Automotive Standard No

onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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