onsemi PowerTrench Type N-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC
- RS 제품 번호:
- 166-2606
- 제조사 부품 번호:
- FDS6670A
- 제조업체:
- onsemi
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,363,000.00
마지막 RS 재고
- 최종적인 2,500 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩545.20 | ₩1,361,590.00 |
| 5000 - 7500 | ₩533.92 | ₩1,334,330.00 |
| 10000 + | ₩522.64 | ₩1,307,540.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-2606
- 제조사 부품 번호:
- FDS6670A
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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