onsemi PowerTrench Type N-Channel MOSFET, 50 A, 250 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 166-1758
- 제조사 부품 번호:
- FDB2710
- 제조업체:
- onsemi
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- RS 제품 번호:
- 166-1758
- 제조사 부품 번호:
- FDB2710
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 260W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Width | 11.33 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 260W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Width 11.33 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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