Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252

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  • 2026년 11월 18일 부터 배송
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10000 +₩1,352.00₩3,381,500.00

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RS 제품 번호:
166-0799
제조사 부품 번호:
IPD100N04S402ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

91nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

AEC-Q101

해당 안됨

COO (Country of Origin):
MY

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPD100N04S402ATMA1


This MOSFET is a high-current switching transistor designed for demanding electronic systems requiring robust thermal and electrical performance. It operates across an extended temperature range and is intended for surface-mount assembly, offering low on-resistance and efficient conduction for power conversion and switching tasks in automotive and industrial environments.

Features and Benefits:


• 2mΩ Rds provides minimal conduction losses
• 100A continuous drain current supports high-load applications
• 150W power dissipation enables substantial heat handling
• 91nC gate charge allows predictable switching control
• 1.2V forward voltage reduces conduction drop under load
• 20V gate tolerance assists protection against overdrive

Applications


• Suitable for automotive power stages requiring AEC‑Q101 qualification
• Used for DC-DC converters in high-current systems
• Ideal for motor-drive switches in automotive electronics
• Can be used for battery management and power distribution
• Used with surface-mount assemblies on compact power modules

What package type should designers accommodate for board layout?


The device comes in a TO‑252 package and is intended for surface mounting, so land patterns should match that three-pin configuration and thermal pad requirements.

How does it perform across temperature extremes?


It maintains operation from -55°C up to 175°C, making it suitable for environments with wide thermal excursions and elevated ambient temperatures.

What polarity and channel arrangement does it use?


It is an N-channel enhancement‑mode device, requiring a positive gate-to-source voltage for conduction and offering standard N-channel switching behaviour.

Are there limits for drain-to-source and gate voltages to consider?


The maximum drain-to-source voltage is 40V and the gate-to-source maximum is 20V, so designs must ensure these limits are not exceeded during transients.

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