Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- RS 제품 번호:
- 165-6919
- 제조사 부품 번호:
- SI3993CDV-T1-GE3
- 제조업체:
- Vishay
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View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩1,099,800.00
일시적 품절
- 2026년 10월 27일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩366.60 | ₩1,102,140.00 |
| 15000 + | ₩360.75 | ₩1,080,495.00 |
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- RS 제품 번호:
- 165-6919
- 제조사 부품 번호:
- SI3993CDV-T1-GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 188mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 188mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SI3993CDV-T1-GE3
This power MOSFET is a surface-mount P-channel switching transistor designed for compact, low-power applications. It operates within a modest voltage range and is intended for efficient switching duties where a dual-element, isolated transistor configuration is required. The component is supplied in a slim TSOP package suited to board-level integration in electronic control systems.
Features and Benefits:
• 30V maximum drain voltage enables safe low-voltage switching
• 2.3A continuous drain current supports moderate load currents
• 188mΩ low RDS(on) reduces conduction losses
• 5.2nC typical gate charge affords fast gate switching
• 1.4W power dissipation allows duty-cycled operation
• Isolated dual-element design enables split-channel implementations
• 2.3A continuous drain current supports moderate load currents
• 188mΩ low RDS(on) reduces conduction losses
• 5.2nC typical gate charge affords fast gate switching
• 1.4W power dissipation allows duty-cycled operation
• Isolated dual-element design enables split-channel implementations
Applications
• Suitable for low-voltage motor control in automation modules
• Ideal for power switching in Compact power supplies
• Used for load switching in embedded control systems
• Can be used for polarity control in battery management circuits
• Ideal for power switching in Compact power supplies
• Used for load switching in embedded control systems
• Can be used for polarity control in battery management circuits
What thermal range can be expected during operation?
The device is rated to operate between -55°C and 150°C, allowing use across extended temperature environments.
How does the package support board assembly?
The TSOP surface-mount format with six pins facilitates automated placement and soldering on densely populated boards.
Can the gate handle higher control voltages?
The gate should not exceed 20V maximum to avoid damaging the gate oxide and to maintain specified performance.
Does the device support multi-element configurations on a single chip?
Yes, it contains two elements per chip in an isolated configuration, enabling paired switching arrangements without external isolation.
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