Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1

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RS 제품 번호:
165-5871
제조사 부품 번호:
BSS806NEH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS 2

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.7nC

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Length

2.9mm

Height

1mm

Standards/Approvals

No

Width

1.3 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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