제조사부품번호

Nexperia Type N-Channel MOSFET, 1 A, 100 V Enhancement, 3-Pin SOT-23 PMV280ENEAR

RS 제품 번호:: 153-0676
제조사 부품 번호:: PMV280ENEAR
제조업체:: Nexperia

Nexperia Type N-Channel MOSFET, 1 A, 100 V Enhancement, 3-Pin SOT-23 PMV280ENEAR

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩9,729.00

일시적 품절

2026년 5월 13일 부터 3,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
25 - 725	₩389.16	₩9,738.40
750 - 1475	₩379.76	₩9,494.00
1500 +	₩374.12	₩9,343.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 153-0676
제조사 부품 번호:: PMV280ENEAR
제조업체:: Nexperia

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	892mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4 mm
	Length	3mm
	Height	1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 892mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4 mm
	Length 3mm
	Height 1mm
	Automotive Standard AEC-Q101

N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.

100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Type N-Channel MOSFET, 1 A, 100 V Enhancement, 3-Pin SOT-23 PMV280ENEAR

관련된 링크들